Polarization-Driven Topological-Insulator Transition for Piezotronic Field-Effect Transistors with Subthreshold Swing of 5 mV/decade

A piezotronic field-effect transistor device based on a topological insulator (TI) is proposed based on wurtzite/zincblende $\mathrm{InAs}$ quantum wells (QWs). The subthreshold swing can reach 5 mV/decade. The subthreshold swing of FETs requires at least a 60 mV gate voltage due to the thermal voltage. Polarization in these QWs can drive a large-gap TI with a bulk band gap of approximately 50 meV. The TI maintains a large band gap characteristic under a compressive stress of 7 GPa.