Design and evaluation of UKRI-MPW1: a monolithic HV-CMOS pixel sensor with high radiation tolerance

Abstract A monolithic High Voltage CMOS (HV-CMOS) prototype, UKRI-MPW1, has been developed to further improve the radiation tolerance of this technology, which is a promising candidate for future high-energy physics experiments. UKRI-MPW1 addresses the issues of high leakage current and parasitic channels identified in its predecessor, UKRI-MPW0, by incorporating an improved chip ring structure and a custom p-shield layer. Additionally, a new pixel flavour with an NMOS-only trimming Digital-to-Analogue Converter (DAC) further improves pixel performance. This chip has demonstrated a radiation tolerance of up to 3 × 10 15 n eq /cm 2 .