Electrical resistance and magnetoresistance of TCNQ-intercalated 2H-NbSe2 single crystals

An increase in the temperature of onset of the structural transition involving the formation of a charge density wave in TCNQ-intercalated 2H-NbSe2, single crystals has been discovered experimentally. A sharp change in the electrical resistance of an NbSe2 (TCNQ) system with a maximum in the region of 290 °K was also discovered. Distortion of the magnetoresistance rosette at temperatures close to the phase transition temperature was observed. Different laws of variation of the magnetoresistance increment as a function of the strength of the magnetic field parallel to and perpendicular to the layers in an NbSe2 (TCNQ) system are established in an experimental geometry j⊥H, j parallel to the layers.