材料科学
佩多:嘘
非阻塞I/O
量子点
Boosting(机器学习)
光电子学
二极管
图层(电子)
纳米技术
化学
生物化学
计算机科学
机器学习
催化作用
作者
Jinxing Zhao,Fei Chen,Haiqiang Jia,Lijin Wang,Ping Liu,Tao Luo,Li Guan,Li Xu,Zhe Yin,Aiwei Tang
出处
期刊:Small
[Wiley]
日期:2023-12-07
标识
DOI:10.1002/smll.202307115
摘要
The imbalance of charge injection is considered to be a major factor that limits the device performance of cadmium-free quantum-dot light-emitting diodes (QLEDs). In this work, high-performance cadmium-free Cu─In─Zn─S(CIZS)-based QLEDs are designed and fabricated through tailoring interfacial energy level alignment and improving the balance of charge injection. This is achieved by introducing a bilayered hole-injection layer (HIL) of Cu-doped NiOx (Cu─NiOx )/Poly(3,4-ethylenedioxythiophene): poly (styrene sulfonate) (PEDOT:PSS). High-quality Cu─NiOx film is prepared through a novel and straightforward sol-gel procedure. Multiple experimental characterizations and theoretical calculations show that the incorporation of Cu2+ ions can regulate the energy level structure of NiOx and enhance the hole mobility. The state-of-art CIZS-based QLEDs with Cu─NiOx /PEDOT:PSS bilayered HIL exhibit the maximum external quantum efficiency of 6.04% and half-life time of 48 min, which is 1.3 times and four times of the device with only PEDOT:PSS HIL. The work provides a new pathway for developing high-performance cadmium-free QLEDs.
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