Design of W-Band Low-Noise Amplifier for Radar

This article presents the design of a W-band wideband low-noise amplifier (LNA) using a 65-nm bulk complementary metal–oxide semiconductor process. A negative feedback transformer is used as an input matching network for wideband matching of the LNA. The transformer is composed of the input shunt inductor and the source inductor of the transistor. The transformer is optimized to achieve low-noise performance and to prevent gain degradation while achieving wideband matching. The LNA has a size of 0.45×0.53 mm, including radio frequency and direct-current pads. As a result of the design, the return loss is more than 10 dB in the 75−85 GHz band, with a peak gain of 17 dB and a minimum noise figure of 4.8 dB.