Nanocrystal-enhanced near-IR emission in the bismuth-doped chalcogenide glasses

Bismuth (Bi)-doped materials have attracted a great deal of attention because of their broadband nearinfrared (near-IR) emission around the wavelength utilized in telecommunications.In this study, broad near-IR emission band from 1 100 to 1 650 nm is generated in the Bi-doped 90GeS2-10Ga2S3 glass and glass-ceramics under 820 nm of light excitation.Based on the analysis of the absorption and emission spectra, the origin of this broadband emission is ascribed to the Bi 2- 2 dimers.The precipitation of β-GeS2 nanocrystals drastically enhances the emission intensity and lifetime of Bi-doped chalcogenide glass.