纳米压痕
材料科学
蓝宝石
纤锌矿晶体结构
外延
兴奋剂
打滑(空气动力学)
复合材料
原子力显微镜
宽禁带半导体
开裂
光电子学
纳米技术
冶金
光学
锌
物理
热力学
激光器
图层(电子)
作者
Sergei O. Kucheyev,Jodie Bradby,James Williams,Chennupati Jagadish,Milos Toth,Matthew R. Phillips,Michael V. Swain
摘要
Wurtzite GaN films grown on sapphire substrates are studied by nanoindentation with a spherical indenter. No systematic dependence of the mechanical properties of GaN epilayers on the film thickness (at least for thicknesses from 1.8 to 4 μm) as well as on doping type is observed. Slip is identified as one of the physical mechanisms responsible for plastic deformation of GaN and may also contribute to the “pop-in” events observed during loading. No visible material cracking is found even after indentations at high loads (900 mN), but a pronounced elevation of the material surrounding the impression is observed.
科研通智能强力驱动
Strongly Powered by AbleSci AI