MESFET
分布式放大器
放大器
电子工程
带宽(计算)
电阻抗
频率响应
增益-带宽产品
电气工程
计算机科学
工程类
射频功率放大器
运算放大器
晶体管
电压
电信
场效应晶体管
CMOS芯片
作者
James B. Beyer,S. Prasad,R. Becker,J.E. Nordman,Gert K. G. Hohenwarter
标识
DOI:10.1109/tmtt.1984.1132664
摘要
In the paper, the analysis of GaAs MESFET distributed amplifiers and a systematic approach to their design are presented. The analysis focuses on fundamental design considerations and also establishes the maximum gain-bandwidth product of the amplifier.The design approach presented enables one to examine the tradeoffs between the variables, such as the device, the number of devices, and the impedances and cutoff frequency of the lines, and arrive at a design which gives the desired frequency response. Excellent agreement is shown when the theoretically predicted response of a typical amplifier is compared with computer-aided analysis results, and good agreement is shown with previously published experimental results.
科研通智能强力驱动
Strongly Powered by AbleSci AI