Ultra-high breakdown high-performance AlInAs/GaInAs/InP power HEMTs

In this paper we report on record breakdown voltages for high-performance InP-based HEMTs. We have obtained gate-to-drain breakdown voltages of as high as 59 V (measured at 1 mA/mm of gate current) for a 500 ym wide InP-based HEMT with a gate-length of 0.25 /spl mu/m and drain-to-source spacing of 5 /spl mu/m. This is the highest breakdown voltage ever achieved for an InP-based HEMT. For a 50X0.25 /spl mu/m/sup 2/ device with a 2/spl mu/m drain-to-source spacing the typical gate-to-drain breakdown voltage is over 30 V with a current density of 520 mA/mm and a maximum transconductance of more than 570 mS/mm. This is the highest combination of breakdown voltage, current density, and transconductance ever reported for any type of FET.>