光电探测器
卤化物
响应度
光电子学
量子效率
材料科学
紫外线
铜
成核
纳米技术
化学
无机化学
有机化学
冶金
作者
Xing Xu,Chao Fan,Zhuodong Qi,Sha Jiang,Qin Xiao,Huikang Liang,Huigao Duan,Qinglin Zhang
标识
DOI:10.1021/acsanm.1c02041
摘要
Cesium copper (I) halides, as a lead-free halide material system, have shown great potential in optoelectronic devices due to their environmental friendliness, high quantum efficiency, and extraordinary air stability. However, most of the previous reports are on quantum dots, bulk crystals, or free-standing wires. It is still challenging to realize the in-plane growth of one-dimensional (1D) cesium copper (I) halides on various substrates, which is essential for nanodevices with high integration density. Herein, we report the planar growth of CsCu2I3 nanoribbons (NBs) with high-quality single crystals on diverse substrates through a spatial-confined method. The in situ investigation of the growth process reveals that the morphology evolution of the NBs is controlled by both thermodynamics and kinetics that are dependent on the local supersaturation near the NBs. The CsCu2I3 NB-based photodetectors (PDs) exhibit an outstanding ultraviolet (UV) detection performance with a high responsivity (0.27 A/W), a specific detectivity (6.38 × 108 Jones), and a fast photoresponse speed (trise/tdecay = 5.8/6.0 ms). Furthermore, the PDs exhibit high stability to light illumination and excellent flexibility to bending. The direct in-plane growth of the lead-free CsCu2I3 NBs on various substrates would promote the practical application of copper (I) halides in electronics and optoelectronics.
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