反铁磁性
凝聚态物理
自旋(空气动力学)
物理
实现(概率)
磁化
自旋极化
极化(电化学)
对称(几何)
磁场
量子力学
化学
几何学
数学
热力学
统计
电子
物理化学
作者
Haiyang Ma,Mengli Hu,Nana Li,Jianpeng Liu,Wang Yao,Jin‐Feng Jia,Junwei Liu
标识
DOI:10.1038/s41467-021-23127-7
摘要
We propose a new type of spin-valley locking (SVL), named $\textit{C}$-paired SVL, in antiferromagnetic systems, which directly connects the spin/valley space with the real space, and hence enables both static and dynamical controls of spin and valley to realize a multifunctional antiferromagnetic material. The new emergent quantum degree of freedom in the $\textit{C}$-paired SVL is comprised of spin-polarized valleys related by a crystal symmetry instead of the time-reversal symmetry. Thus, both spin and valley can be accessed by simply breaking the corresponding crystal symmetry. Typically, one can use a strain field to induce a large net valley polarization/magnetization and use a charge current to generate a large noncollinear spin current. We predict the realization of the $\textit{C}$-paired SVL in monolayer V$_2$Se$_2$O, which indeed exhibits giant piezomagnetism and can generate a large transverse spin current. Our findings provide unprecedented opportunities to integrate various controls of spin and valley with nonvolatile information storage in a single material, which is highly desirable for versatile fundamental research and device applications.
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