电阻随机存取存储器
锡
材料科学
图层(电子)
电极
铜
光电子学
随机存取存储器
碲
随机存取
复合材料
冶金
计算机科学
化学
计算机硬件
操作系统
物理化学
作者
Po-Hsun Chen,Chih‐Yang Lin,Jeani Chang,Yi-Ting Tseng,Jen‐Wei Huang
标识
DOI:10.1088/1361-6463/abd8f1
摘要
Abstract In this work, we systematically investigate the effects of the insertion of the solid-state electrolyte material copper–tellurium (CuTe) in resistance random access memory (RRAM). The CuTe layer is inserted as Cu/CuTe/SiO 2 /TiN (top-to-bottom) and the device exhibits excellent resistance switching (RS) characteristics such as lower forming bias, a larger memory window and faster RS speed, compared to the Cu/SiO 2 /TiN device. This validates the effects of the inserted CuTe layer with a Cu electrode. Furthermore, an additionally fabricated Cu/CuTe/TiN device demonstrates that the CuTe layer can also successfully act as a middle insulator for the RRAM device, based on the obtained experimental results.
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