可靠性(半导体)
MOSFET
功率半导体器件
电力电子
功率MOSFET
材料科学
商业化
电气工程
数码产品
功率(物理)
氮化镓
电源模块
电子工程
晶体管
计算机科学
工程物理
工程类
电压
纳米技术
物理
政治学
量子力学
法学
图层(电子)
作者
Kevin J. Chen,Oliver D. Häberlen,Alex Lidow,C. L. Tsai,Tetsuzo Ueda,Yasuhiro Uemoto,Yifeng Wu
标识
DOI:10.1109/ted.2017.2657579
摘要
In this paper, we present a comprehensive review and discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparison with other competing power device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.
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