化学气相沉积
材料科学
单层
外延
氧化物
基质(水族馆)
纳米技术
磷烯
化学工程
图层(电子)
冶金
海洋学
地质学
工程类
作者
S. Karamat,Shabeya Kanwal
出处
期刊:Semiconductors and Semimetals
日期:2023-01-01
卷期号:: 169-187
标识
DOI:10.1016/bs.semsem.2023.10.003
摘要
The shrinkage in the size of materials harnessed the world due to their unique and novel properties, which emerge at low dimensions. Among low geometry, 2D non-layered materials are enthusiastically pursued by the scientific community due to their novel properties. Various techniques have been developed so far to prepare 2D materials and chemical vapor deposition (CVD) is considered the well-suited growth technique for the non-layered growth of 2D materials. CVD deposits materials as a result of a reaction occurring in the gaseous phase or at the desired substrate surface. Different factors such as reactions of precursor gases occurring at the surface, diffusion of the required species, mass transfer of gaseous species, and desorption reaction highly influenced the growth of material and can be controlled by optimizing temperature, pressure, and geometrical features of the system. In this chapter, the CVD synthesis of 2D non-layered materials is presented. The synthesis routes mainly follow chemical vapor deposition or its types i.e., thermal CVD, plasma CVD, metal-oxide CVD, self-limited epitaxial growth, Vander waal epitaxy, and much more rather than using other techniques of deposition. The synthesis and characterization of monolayer materials like phosphorene, cadmium sulfide, selenium nanoflakes, titanium oxide, Indiumsulphide, and their applications will be discussed.
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