The effect of nitrogen doping and heat treatment on electrical resistivity of CVD SiC bulks

Abstract With the expansion of chip size, the challenge of achieving uniform etching becomes progressively more formidable. Implementing CVD SiC etching rings enhances etching uniformity effectively and offers notable attributes of high purity and prolonged operational lifespan. Controlling the resistivity of CVD SiC etching rings is essential to cater to diverse processes and equipment requirements. This investigation delves into the impact of nitrogen doping and heat treatment on the resistivity of CVD SiC bulks. Elevated nitrogen doping results in a heightened carrier concentration within CVD SiC. In modest doping cases, the grain boundary barrier height escalates with the doping concentration. However, in instances of higher doping concentrations, the grain boundary barrier diminishes with increasing doping concentration. Following heat treatment, there is a rise in the carrier concentration of the sample. Nonetheless, the surge in sample porosity precipitates a mobility reduction, yielding minimal variance in resistivity before and after heat treatment.