材料科学
热电材料
热电效应
比例(比率)
纳米技术
工程物理
复合材料
热力学
热导率
物理
量子力学
工程类
作者
Jiaqi Yuan,Tingting Deng,Pengfei Qiu,Zhi Liu,Zhengyang Zhou,Ming Chen,Yifei Xiong,Chao Ma,Xun Shi
标识
DOI:10.1002/adfm.202402546
摘要
Abstract Copper (Cu)‐based thermoelectric (TE) materials have attracted great attention from both scientific and industrial societies, but for a long time, their real applications are greatly limited by the lack of high‐performance n‐type Cu‐based TE materials. Most recently, the novel n‐type Cu‐based TE material, CuIn 5 Se 8 , has been discovered to show a record‐high TE figure‐of‐merit ( zT ) to match the state‐of‐the‐art p‐type Cu‐based TE materials. However, the physical origin of such high zT is still unclear due to its complex phase compositions and crystal structures. In this work, it is revealed that the excellent TE performance is mainly contributed by the intrinsically ultralow lattice thermal conductivity originating from the unique all‐scale hierarchical architecture. It covers the ranges from atomic‐scale cation disorder in the tetragonal CuIn 5 Se 8 phase and nanoscale diversified stacking units and stacking sequences in the hexagonal CuIn 5 Se 8 phase, to mesoscale grain boundaries between the tetragonal phase and hexagonal phase. Doping Br at the Se‐sites can largely tune the electrical transports of CuIn 5 Se 8 while maintaining the ultralow lattice thermal conductivity, leading to high zT reaching the optimal value predicted by the single parabolic model. This work will guide the investigation of n‐type Cu‐based TE materials in the future.
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