IGZO Channel VCT(Vertical Channel Transistor) Technology for sub-10nm DRAM: Challenges and Opportunites

In DRAM technology at nodes below 10 nm, scaling down conventional architectures presents significant challenges due to uprising physical limit on integration and electrical properties. As alternatives, innovative structures incorporating deposition channels, such as VCT with IGZO channels, are being explored. This paper presents the IGZO channel VCT as a promising candidate for next-generation DRAM cell architecture with several technical challenges.