Performance improvement photodetectors with high speed and detectivity using terbium-doped ZIF-8 and MOF-5 films

Crystal engineering is critical for improving the crystal quality and tuning the optoelectronic properties of metal-organic framework materials (MOFs). Doping MOFs is one of the practical approaches to improve the optoelectronic properties of MOFs. Here, a simple and effective method is used to grow MOF nanoparticles as films on the surface of the material. MOF-5 and ZIF-8 nanoparticles can be uniformly grown as films on the Si substrates. The crystalline quality of MOF films is improved after doping with Tb. Meanwhile, two-dimensional conducting photodetectors and photodetector arrays were prepared with perovskite films. Meanwhile, planar conducting photodetector arrays were prepared with MOF films. The photoluminescence (PL) intensity of the Tb-ZIF-8 and Tb-MOF-5 films shows an improvement compared to both ZIF-8 and MOF-5 layers, which leads to improved charge carriers transfer. The maximum photocurrents were about 4×10-8 A and 3×10-8 A of exposed light at 525 and 425 nm, respectively, at a fixed bias of 10 V for Tb-ZIF-8. The highest photo response of approximately 2.4×10-7 and 1.2×10-7 A was measured under 525 and 450 nm for the Tb-MOF-5-based device, respectively. The photocurrent behavior is optimized in the visible range due to the increased number of photo-generated carriers at 525 nm. The Tb-MOF-5 based device is a more powerful photodetector than the Tb-ZIF-8 based device under the same conditions. In addition, the stability of Tb-MOF-5 and Tb-ZIF-8 based photodetectors was obtained 77% and 30%, respectively. The photodetectors of Tb-MOF-5 have higher stability and better performance than Tb-ZIF-8.