材料科学
红外线的
胶体
二极管
纳米技术
发光二极管
螯合作用
光电子学
化学
光学
物理化学
冶金
物理
作者
Yongqiang Ji,Qixuan Zhong,Maotao Yu,Haoming Yan,Lei Li,Qiuyang Li,Hongxing Xu,Shunde Li,Peng Chen,Lei Zhao,Xiaohan Jia,Yun‐Feng Xiao,Yuzhuo Zhang,Fan Xu,Lichen Zhao,Deying Luo,Xiaoyu Yang,Qihuang Gong,Xinqiang Wang,Rui Zhu
出处
期刊:ACS Nano
[American Chemical Society]
日期:2024-03-08
标识
DOI:10.1021/acsnano.3c11941
摘要
Perovskite light-emitting diodes (PeLEDs) are the next promising display technologies because of their high color purity and wide color gamut, while two classical emitter forms, i.e., polycrystalline domains and quantum dots, are encountering bottlenecks. Weak carrier confinement of large polycrystalline domains leads to inadequate radiative recombination, and surface ligands on quantum dots are the main annihilation sites for injected carriers. Here, pinpointing these issues, we screened out an amphoteric agent, namely, 2-(2-aminobenzoyl)benzoic acid (2-BA), to precisely control the in situ growth of FAPbI3 (FA: formamidine) nanodomains with enhanced space confinement, preferred crystal orientation, and passivated trap states on the transport-layer substrate. The amphoteric 2-BA performs bidentate chelating functions on the formation of ultrasmall perovskite colloids (<1 nm) in the precursor, resulting in a smoother FAPbI3 emitting layer. Based on monodispersed and homogeneous nanodomain films, a near-infrared PeLED device with a champion efficiency of >22% plus enhanced T80 operational stability was achieved. The proposed perovskite nanodomain film tends to be a mainstream emitter toward the performance breakthrough of PeLED devices covering visible wavelengths beyond infrared.
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