Sm and Mn doped enhancing the electrical properties of .68PMN–.32PT relaxor ferroelectric thin films

Abstract (1− x )Pb(Mg 1/3 Nb 2/3 )O 3 – x PbTiO 3 (PMN–PT) has attracted attention due to its excellent electrical properties as a typical relaxor ferroelectric material. High‐quality Mn–Sm co‐doped 0.68PMN–0.32PT thin films were synthesized on the Pt/Ti/SiO 2 /Si substrates by sol–gel based on spin coating method. The results show that 1 mol% Mn–2 mol% Sm co‐doped PMN–PT thin films have high dielectric constant ( ε r ∼ 1895) and relatively low dielectric loss (tan δ ∼ .039) at 1 kHz. They also show superior ferroelectric polarization ( P max ∼ 53.71 μC/cm 2 , P r ∼ 30.85 μC/cm 2 ) and high dielectric breakdown strength (∼1656.6 kV/cm), which are primarily due to the low leakage current density (∼10 −7 A/cm 2 ). This work suggests a practical approach to enhance the dielectricity, piezoelectricity, and ferroelectricity of PMN–PT thin films.