47‐2: Investigation on Mobility Improvement of Crystalline Metal‐Oxide TFT

In this paper, we have developed a novel crystalline metal oxide thin‐film transistor (TFT) that achieves a significant improvement in device mobility and stability. Unlike the conventional amorphous process, the fabrication of crystalline metal oxide TFTs requires special control of the crystallization process. Based on the G4.5 production line, we have specifically optimized the deposition process to obtain a thin film with good large‐area uniformity. Ultimately, through multiple rounds of optimization and fine‐tuning of the device process, we have successfully fabricated crystalline oxide TFT devices with a mobility of 46.2 cm 2 /V·s, a positive bias temperature stress (PBTS) of 0.25 V, and a negative bias temperature stress (NBTIS) of ‐ 1.04 V.