The Detailed Analysis of Diffusion Behavior of implanted ions in 4H-SiC

We studied the diffusion behavior of implanted N, Al, P and Ge into 4H-SiC in detail. The anomalous diffusion of Al and Ge was observed in the case of high dose implantation at room temperature. On the other hand, the slight diffusion was seen at high temperature implantation. These differences would be attributed to the amount of implantation damage. Although the amount of implant damage is almost the same for Al and P, the diffusion of P is small at room temperature implantation. This would be due to the fast recovery rate of implant damage for P. The small diffusion of N can be explained by the small amount of damage due to small mass. The anomalous diffusion of Al is suppressed as decreasing the implantation dose. From these results, it is clear that the implantation damage enhances the diffusion.