High‐Performance Room‐Temperature Extended‐Wavelength InAs‐Based Middle‐Wavelength Infrared Photodetector

Herein, a high‐performance room‐temperature extended‐wavelength InAs‐based barrier‐type photodetector that operates in the 1.5–3.5 μm wavelength range is presented. The experimental results show that the uncooled photodetector exhibits a peak responsivity of 1.47 A W −1 at 3 μm and a peak detectivity as high as 1.6 × 10 10 cm Hz 1/2 W −1 at zero bias, which is 3–10 times higher than that of available commercial InAs photodetectors. The external quantum efficiency at the peak responsivity is ≈63%. The nature of the detector's extended spectral response is investigated using numerical computation analyses, which indicate that such improvement is primarily contributed by the InAsSbP window layer.