光电探测器
光电子学
材料科学
红外线的
异质结
比探测率
量子效率
光学
响应度
物理
作者
Yang Wang,Yue Gu,Ailiang Cui,Qing Li,Ting He,Kun Zhang,Zhen Wang,Ziping Li,Zhenhan Zhang,Peisong Wu,Runzhang Xie,Fang Wang,Peng Wang,Chongxin Shan,Hua Li,Zhenhua Ye,Peng Zhou,Weida Hu
标识
DOI:10.1002/adma.202107772
摘要
Uncooled infrared photodetectors have evoked widespread interest in basic research and military manufacturing because of their low-cost, compact detection systems. However, existing uncooled infrared photodetectors utilize the photothermoelectric effect of infrared radiation operating at 8-12 µm, with a slow response time in the millisecond range. Hence, the exploration of new uncooled mid-wavelength infrared (MWIR) heterostructures is conducive to the development of ultrafast and high-performance nano-optoelectronics. This study explores a van der Waals heterojunction on epitaxial HgCdTe (vdWs-on-MCT) as an uncooled MWIR photodetector, which achieves fast response as well as high detectivity for spectral blackbody detection. Specifically, the vdWs-on-MCT photodetector has a fast response time of 13 ns (77 MHz), which is approximately an order of magnitude faster than commercial uncooled MCT photovoltaic photodetectors. Importantly, the device exhibits a photoresponsivity of 2.5 A W-1 , quantum efficiency as high as 85%, peak detectivity of 2 × 1010 cm Hz1/2 W-1 under blackbody radiation at room temperature, and peak detectivity of up to 1011 cm Hz1/2 W-1 at 77 K. Thereby, this work facilitates the effective design of high-speed and high-performance heterojunction uncooled MWIR photodetectors.
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