杰纳斯
异质结
材料科学
联轴节(管道)
光电子学
工程物理
纳米技术
冶金
物理
作者
Kunyan Zhang,Yilin Guo,D. J. Larson,Ziyan Zhu,Shiang Fang,Efthimios Kaxiras,Jing Kong,Shengxi Huang
出处
期刊:ACS Nano
[American Chemical Society]
日期:2021-08-31
卷期号:15 (9): 14394-14403
被引量:36
标识
DOI:10.1021/acsnano.1c03779
摘要
The interlayer coupling in van der Waals heterostructures governs a variety of optical and electronic properties. The intrinsic dipole moment of Janus transition metal dichalcogenides (TMDs) offers a simple and versatile approach to tune the interlayer interactions. In this work, we demonstrate how the van der Waals interlayer coupling and charge transfer of Janus MoSSe/MoS2 heterobilayers can be tuned by the twist angle and interface composition. Specifically, the Janus heterostructures with a sulfur/sulfur (S/S) interface display stronger interlayer coupling than the heterostructures with a selenium/sulfur (Se/S) interface as shown by the low-frequency Raman modes. The differences in interlayer interactions are explained by the interlayer distance computed by density-functional theory (DFT). More intriguingly, the built-in electric field contributed by the charge density redistribution and interlayer coupling also play important roles in the interfacial charge transfer. Namely, the S/S and Se/S interfaces exhibit different levels of PL quenching of MoS2 A exciton, suggesting the enhanced and reduced charge transfer at the S/S and Se/S interface, respectively. Our work demonstrates how the asymmetry of Janus TMDs can be used to tailor the interfacial interactions in van der Waals heterostructures.
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