Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling

We investigate resonant tunnelling in GaAs/(AlGa)As double-\n barrier resonant-tunnelling diodes in which a single layer of\n InAs self-assembled quantum dots is embedded in the centre of\n the GaAs quantum well. The dots provide a well-defined and\n controllable source of disorder in the well and we use resonant\n tunnelling to study the effect of this disorder on the\n electronic properties of the well.