Probing the electronic properties of disordered two-dimensional systems by means of resonant tunnelling

We investigate resonant tunnelling in GaAs/(AlGa)As double-barrier resonant-tunnelling diodes in which a single layer of InAs self-assembled quantum dots is embedded in the centre of the GaAs quantum well. The dots provide a well-defined and controllable source of disorder in the well and we use resonant tunnelling to study the effect of this disorder on the electronic properties of the well.