Study of the Machining Principle and Influencing of Ultrasonic Lapping on SiC Single Crystal

In order to resolve precision machining problem for SiC single crystal, a new ultrasonic lapping method is proposed. According to the brittle and hardness character of SiC single crystal, the principle of ultrasonic lapping is firstly introduced, and then parameters of experimental for ultrasonic lapping, such as wheel speed, grit size, vibration amplitude, frequency are given. Lastly, experimental result is analyzed by comparing ultrasonic lapping process with the conventional lapping process in the MRR and surface quality.