Reliability of loss‐coupled 1.55 μm DFB laser diode with automatically buried absorptive InAsP layer

Abstract The authors achieved loss‐coupled 1.55 μm distributed feedback laser diode incorporating automatically buried absorptive layer implemented by a single step growth that simplifies device fabrication than those of conventional ones. Based on 2800 h of accelerated aging test, estimated lifetime is 1.4 × 10 6 h at room temperature. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 636–638, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22208