脉冲激光沉积
材料科学
光电子学
异质结
薄膜
带隙
塞贝克系数
二极管
沉积(地质)
霍尔效应
分析化学(期刊)
电阻率和电导率
纳米技术
化学
热导率
复合材料
古生物学
沉积物
生物
工程类
色谱法
电气工程
作者
R. S. Ajimsha,K. Vanaja,M. K. Jayaraj,Pankaj Misra,V. K. Dixit,L. M. Kukreja
标识
DOI:10.1016/j.tsf.2007.03.002
摘要
Transparent diode heterojunction on ITO coated glass substrates was fabricated using p-type AgCoO2 and n-type ZnO films by pulsed laser deposition (PLD). The PLD of AgCoO2 thin films was carried out using the pelletized sintered target of AgCoO2 powder, which was synthesized in-house by the hydrothermal process. The band gap of these thin films was found to be ∼ 3.89 eV and they had transmission of ∼ 55% in the visible spectral region. Although Hall measurements could only indicate mixed carrier type conduction but thermoelectric power measurements of Seebeck coefficient confirmed the p-type conductivity of the grown AgCoO2 films. The PLD grown ZnO films showed a band gap of ∼ 3.28 eV, an average optical transmission of ∼ 85% and n-type carrier density of ∼ 4.6 × 1019 cm− 3. The junction between p-AgCoO2 and n-ZnO was found to be rectifying. The ratio of forward current to the reverse current was about 7 at 1.5 V. The diode ideality factor was much greater than 2.
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