光电导性
金属有机气相外延
材料科学
光电子学
纳米技术
外延
图层(电子)
作者
张德恒 Zhang Deheng,Yunyan Liu,Dejun Zhang
出处
期刊:Chinese Physics
[Science Press]
日期:2001-01-01
卷期号:50 (9): 1800-1800
被引量:2
摘要
This paper studies the UV photoconductivity for non-doped and weakly Mg doped n-type GaN films deposited by MOCVD. It was observed that these n-type samples have notable UV photoresponse and the relaxation time of the photoresponse is relatively short.In the weak intensity range, the photoresponse decreases linearly with the light intensity and the relaxation time of the photoresponse becomes larger.
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