Quantum confinement effects in the subthreshold characteristics of short-channel DMDG MOSFET

In this paper, 2D Poisson's equation and 1D Schrödinger equation have been solved self-consistently to derive the analytical model of subthreshold current and subthreshold slope for DMDG SON MOSFET in sub 20 nm regime. Extensive study has been carried out to examine the behavior of subthreshold slope with the variation of different parameters like channel length, Si film thickness and doping concentration. It is found that the subthreshold slope in the proposed model have a near ideal value for a given Si film thickness and substrate doping concentration for channel length as short as 20nm.