无杂散动态范围
逐次逼近ADC
有效位数
电容器
校准
12位
计算机科学
冗余(工程)
转换器
最低有效位
电子工程
CMOS芯片
电气工程
工程类
物理
电压
量子力学
操作系统
作者
Chao Cao,Qian Ye,Zhangming Zhu,Yintang Yang
标识
DOI:10.1016/j.mejo.2015.06.013
摘要
The paper introduces a sub-binary architecture in 16-bit split-capacitor successive-approximation register (SAR) analog-to-digital converters (ADCs). The redundancy in sub-binary capacitors array provides ways to correct the dynamic errors in conversion procedure with a smaller overall conversion time. So the redundancy can be used to solve the mismatch or parasitic problems in split-capacitor CDAC SAR. A background digital calibration method with perturbation is utilized to calibrate the conversion errors. The behavioral simulation and measured results show that the 16-bit SAR ADC performance can be improved after the digital calibration. The prototype was fabricated in 0.18 μm CMOS process. The INL are −6/7.813 LSB, the DNL are −0.925/1.313 before calibration. After calibration, the INL are −0.813/0.938, the DNL are −0.625/0.688. The measured ENOB is 11.42 bit and SFDR is 79.95 dB before calibration, while the ENOB is 14.46 bit and SFDR is 95.65 dB after calibration.
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