记忆电阻器
材料科学
电阻随机存取存储器
神经促进
神经形态工程学
光电子学
长时程增强
电极
纳米技术
脉搏(音乐)
电压
电子工程
计算机科学
电气工程
化学
物理化学
工程类
机器学习
受体
生物化学
人工神经网络
作者
Nasir Ilyas,Dongyang Li,Hongjun Dong,Xiangdong Jiang,Yadong Jiang,Wei Li
标识
DOI:10.1186/s11671-020-3249-7
摘要
Abstract In this study, by inserting a buffer layer of TiO x between the SiO x :Ag layer and the bottom electrode, we have developed a memristor device with a simple structure of Ag/SiO x :Ag/TiO x /p ++ -Si by a physical vapor deposition process, in which the filament growth and rupture can be efficiently controlled during analog switching. The synaptic characteristics of the memristor device with a wide range of resistance change for weight modulation by implementing positive or negative pulse trains have been investigated extensively. Several learning and memory functions have been achieved simultaneously, including potentiation/depression, paired-pulse-facilitation (PPF), short-term plasticity (STP), and STP-to-LTP (long-term plasticity) transition controlled by repeating pulses more than a rehearsal operation, and spike-time-dependent-plasticity (STDP) as well. Based on the analysis of logarithmic I-V characteristics, it has been found that the controlled evolution/dissolution of conductive Ag-filaments across the dielectric layers can improve the performance of the testing memristor device.
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