Schottky Diode Mixers on Gallium Arsenide Antimonide or IndiumGalliumArsenide

We have investigated the suitability of using two low-barrier ternary III-V compounds, InGaAs and GaAsSb for Schottky mixers. These materials have lower band-gaps than GaAs, and hence their Schottky barrier heights are lower than those on GaAs. We have found that for Schottky diode mixers employing DC bias, these materials do not yield a reduction in required LO power. However, for mixers that are zero-biased (such as many that are subharmonically pumped), use of these materials in mixers will give a large reduction in required LO power.