外延
动力学蒙特卡罗方法
蒙特卡罗方法
增长模型
材料科学
三元运算
超晶格
统计物理学
异质结
硅
凝聚态物理
化学物理
化学
纳米技术
物理
光电子学
计算机科学
数学
图层(电子)
统计
数理经济学
程序设计语言
作者
Celso I. Fornari,Gabriel Fornari,P. H. O. Rappl,EduardoAbramof,Jerônimo dos S. Travelho
出处
期刊:InTech eBooks
[InTech]
日期:2018-03-07
被引量:3
标识
DOI:10.5772/intechopen.70220
摘要
A numerical Monte Carlo (MC) model is described in detail to simulate epitaxial growth. This model allows the formation of structural defects, like substitutional defects and vacancies, and desorption of adsorbed atoms on the surface. The latter feature supports the study of epitaxial growth at very high kinetic regime. The model proposed here is applied to simulate the homoepitaxial growth of Si. The results obtained fit well to the experimental reports on (0 0 1) silicon homoepitaxy. The easy implementation of a large number of microscopic processes and the three-dimensional spatial information during the film growth suggests that the model can be applied to simulate the growth of binary, ternary, or more compounds and even the growth of superlattices and heterostructures.
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