Thermally stable integrated Se-based OTS selectors with >20 MA/cm2 current drive, >3.103 half-bias nonlinearity, tunable threshold voltage and excellent endurance

We report on novel integrated Se-based Ovonic Threshold Switching selector devices, with sizes down to 50nm, which can be operated reliably at high drive current densities, exceeding 20MA/cm ² , and have high half-bias nonlinearity exceeding well 10 ³ . We show functional devices after a thermal budget of 350°C. Their electrical properties are tunable by careful control of the Ge _x Se _1-x films composition, thickness or process condition.