铁电性
极化(电化学)
各向异性
材料科学
电场
反平行(数学)
凝聚态物理
领域(数学分析)
结晶学
单一领域
磁畴壁(磁性)
光学
磁各向异性
物理
电介质
光电子学
化学
磁化
磁场
数学分析
量子力学
物理化学
数学
作者
Yaming Zhou,Qiang Li,Chao Xu,Fangping Zhuo,Qingfeng Yan,Shujun Zhang,Xiangcheng Chu
摘要
Abstract Anisotropic domain switching paths in [001]‐, [011]‐, and [111]‐poled Pb(Mg 1/3 Nb 2/3 )O 3 ‐0.30PbTiO 3 single crystals were studied by in situ polarized light microscopic driven by an antiparallel electric field. Orientation‐dependent electric field induced polarization and strain behaviors were investigated systematically. For [001]‐oriented crystals, only one‐step 71° switching occurred during the domain switching process, resulting in the appearance of stripe domain walls whose traces on (001) plane were along 45° or 135° with respect to [100] direction. But for [011]‐oriented samples, a two‐step 71° switching was observed during 109° switching and the projections of formed twin domain walls on the (011) plane are along 35.3° or 144.7° with respect to [01 ] direction. Moreover, a three‐step 71° switching was found during 180° switching in [111]‐oriented samples. It was demonstrated by the produced domain walls whose projections on the (1 0) plane are along 35.3°, 90° or 160.6° with respect to [11 ] direction. The energetically motivated mechanism based on multistep polarization switching process was also proposed to explain the anisotropic domain switching paths. Our results provided a visualized observation on the ferroelectric domain switching process and also laid the solid foundations for controlling polarization order parameter in ferroelectric single crystals.
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