电子束光刻
平版印刷术
极紫外光刻
材料科学
X射线光刻
下一代光刻
电压
抵抗
无光罩微影
加速电压
光电子学
阴极射线
失真(音乐)
光学
电子
纳米技术
CMOS芯片
物理
电气工程
工程类
放大器
量子力学
图层(电子)
作者
Lau Kien Mun,Dominique Drouin,Éric Lavallée,J. Beauvais
标识
DOI:10.1017/s1431927604040711
摘要
A major issue in low voltage lithography is surface charging, which results in beam deflection presented as uneven exposure between adjacent structures. In this study, charge-induced pattern distortions in low-voltage energy beam lithography (LVEBL) were investigated using a silicide direct-write electron beam lithography process. Two methodologies have been proposed to avert charging effects in LVEBL, namely, pattern randomizing and lithography using the crossover voltage. Experimental results demonstrated that these methods are effective in significantly reducing the problems associated with charging. They indicate that charging on a sample is a function of time interval and proximity between line structures. In addition, the optimum time and distance between exposures for no charge-induced pattern distortion were determined. By using the crossover voltage of the material for lithography, charging effect can be significantly minimized.
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