期刊:International Symposium on Plasma Process-Induced Damage日期:2005-08-24卷期号:: 30-33被引量:12
标识
DOI:10.1109/ppid.1996.715196
摘要
A CHARM/sup TM/-2 investigation of wafer charging during via etching shows that wafer surface conditions strongly influence the observed results. Under identical process conditions, bare wafers underestimate the charging results. When wafers are covered with patterned resist, much higher surface-substrate potentials and current densities are observed.