Tuning the Electrical Performance of 2D Perovskite Field‐Effect Transistors by Forming Organic Semiconductor/Perovskite van der Waals Heterojunctions

Abstract The development of techniques for tuning/controlling the properties of electronic devices such as field‐effect transistors (FETs) is important for the optimization of device performance or the realization of custom‐designed device functions. Here, a simple method for tuning the performance of 2D perovskite ((PEA) 2 SnI 4 ) FETs by transferring organic semiconductor PDVT‐10 films onto (PEA) 2 SnI 4 films to form van der Waals heterojunctions (vdWHs) is presented. By varying the electrical properties of PDVT‐10 with doping technique, the performance of (PEA) 2 SnI 4 FETs can be effectively tuned in terms of on‐state current, threshold voltage, and mobility, with mobility increased from 0.10 cm 2 V −1 s −1 for pristine (PEA) 2 SnI 4 FETs to 0.46 cm 2 V −1 s −1 for the vdWH‐based FETs. This phenomenon can be attributed to the holes transfer occurring at heterojunction interface. More interestingly, the performance of the (PEA) 2 SnI 4 FETs can be almost fully recovered once the PDVT‐10 films are removed, indicating the reversibility of the method. Such method of tuning semiconductor device performance by forming vdWHs can be also extended to other semiconductors and devices.