Photoluminescence enhancement study in a Bi-doped Cs2AgInCl6 double perovskite by pressure and temperature-dependent self-trapped exciton emission

Here, we report a halide precursor acid precipitation method to synthesize Cs₂AgIn_1-xBi_xCl₆ (x = 0, 0.02, 0.04, 0.08, 0.16, 0.32, 0.64, and 1) microcrystals. Cs₂AgInCl₆ and Bi derivative double perovskites show broadband white light emission via self-trapped excitons (STEs) and have achieved the highest internal quantum efficiency of up to 52.4% at x = 0.08. Synchrotron X-ray diffraction confirmed the linear increase of lattice parameters and cell volume with Bi³⁺ substitution at In³⁺ sites. Absorbance, photocurrent excitation, and photoluminescence excitation spectra are used to observe possible transitions from the valence to the conduction band or free exciton (FE) states as well as transitions within local Bi³⁺ states. The broadband photoluminescence is quenched via a single nonradiative process with an activation energy ΔE = 1490 cm^-1 for Cs₂AgIn_0.92Bi_0.08Cl₆. Under normal conditions, we observed STE emission, but applying external pressure alters the electronic structure such that at elevated pressure, the only emission via the FE state is observed. We anticipate that structure, temperature and pressure-dependent photoluminescence studies will help the future use of a single-source lead-free double perovskite for white light-emitting diode applications.