激光阈值
激光线宽
纳米激光器
半导体激光器理论
激光器
材料科学
二极管
Q系数
模式(计算机接口)
增益开关
半导体
宽禁带半导体
光电子学
激子
光学
连续波
谐振器
物理
量子力学
波长
作者
Kai Tang,Peng Wan,Caixia Kan,Maosheng Liu,Dan Shi,Mingming Jiang
摘要
Developing current-driven single-mode micro-/nanolasers is highly desirable for various practical applications, but still faces severe challenges. Herein, a continuous-wave operation of an electrically driven laser device using a Ga-incorporated n-type ZnO microwire, MgO nanofilm, and p-type GaAs substrate is demonstrated. The device can enable a single-mode lasing peaking at 820 nm and a narrow linewidth of about 0.4 nm, and the quality factor Q is evaluated to 2000. The presence of a distinct threshold, sharp linewidth reduction, and polarized coherent illumination provides conclusive evidence for achieving lasing oscillation. Relative polaritonic features are further proofed; thus, single-mode lasing feature should be ascribed to the exciton–polariton. The results can enable a workable avenue to realize near-infrared micro-/nanolaser diodes for high-efficiency coherent light sources, which are no longer limited by conventional narrow-bandgap semiconductors.
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