Recent investigations of SiGe/GaP thermoelectric materials at TTC and GE
作者
Richard Masters,J. F. Nakahara
出处
期刊:Intersociety Energy Conversion Engineering Conference日期:2003-01-13卷期号:: 706-709
标识
DOI:10.1109/iecec.1989.74544
摘要
The chemical, microstructural, and thermoelectric properties of improved and unimproved SiGe/GaP alloys are compared. High-temperature heat treatment of hot pressed SiGe/GaP materials is shown to produce an improved combination of thermoelectric properties. A large reduction in the electrical resistivity with only a slight decrease in the thermal conductivity is observed. A P/Ga ratio near 10 is also observed; however, additional work is required to verify if P/Ga ratio optimization is decisive in improving the material.>