材料科学
外延
光电子学
基质(水族馆)
微波食品加热
碳化硅
发光二极管
紫外线
工程物理
纳米技术
冶金
电信
计算机科学
工程类
海洋学
图层(电子)
地质学
作者
A. Powell,Jason R. Jenny,S. Müller,H. McD. Hobgood,V. F. Tsvetkov,ROBERT LENOARD,Calvin S. Carter
标识
DOI:10.1142/s0129156406004016
摘要
In recent years SiC has metamorphisized from an R&D based materials system to emerge as a key substrate technology for a significant fraction of the world production of green, blue and ultraviolet LEDs. Emerging markets for SiC homoepitaxy include high-power switching devices and microwave devices. Applications for heteroepitaxial GaN-based structures on SiC substrates include lasers and microwave devices. In this paper we review the properties of SiC, assess the current status of substrate and epitaxial growth, and outline our expectations for SiC in the future.
科研通智能强力驱动
Strongly Powered by AbleSci AI