Preparation and electrical properties of thin films of antimony sulphur iodide (SbSI)

The c-axis oriented thin films of SbSI are prepared by the recrystallization of the amorphous SbSI films. The recrystallized films show the pyroelectric properties and have a dielectric capacitance between 0.2-0.5 μF/cm2 and the tan δ <1%.