Electronic structure evolution in doping of fullerene (C60) by molybdenum trioxide
作者
Chenggong Wang,Yongli Gao
出处
期刊:Applied Physics Letters [American Institute of Physics] 日期:2014-09-15卷期号:105 (11): 111601-111601被引量:8
标识
DOI:10.1063/1.4895784
摘要
Molybdenum oxide doping of fullerene has been investigated using ultraviolet photoemission spectroscopy (UPS), X-ray photoemission spectroscopy (XPS), and inverse photoemission spectroscopy (IPES). The lowest unoccupied molecular orbital and the highest occupied molecular orbital (HOMO) can be observed directly with IPES and UPS. It is observed that the Fermi level position in fullerene is modified by molybdenum oxide doping, and the HOMO onset is shifted to less than 0.3 eV below the Fermi level. The energy level shift is found to saturate at doping ratio of 18%. Till this stage, the shift depends on the doping concentration in a semi-logarithmic scale, with a slope substantially higher than that of the traditional semiconductor theory. The XPS results indicate that charge transfer continues beyond the energy level shift saturation till the doping ratio reaches 66% as evidenced by the Mo5+ component. At higher doping concentration, there is more Mo6+ component, which indicates the saturation of the charge transfer between MoOx and C60.