Photoelectret state in Al, Ga-Doped Bi12SiO20 crystals

The results of the investigation of the photoelectret state in Al- and Ga-doped BSO crystals are presented. The dependences of thermally stimulated depolarization current and capacity in the temperature range (200-800) K are analyzed. Contribution of the quasidipole mechanism of polarization and parameters (the activation energies, the value of trapped charge, the relaxator “strength”) of electrically active defects are determined. Keywords: PhotoelectretAl- and Ga-doped Bi12SiO20 crystalsquasidipole mechanism