铁电性
材料科学
矫顽力
热稳定性
薄膜
微电子
居里温度
电介质
复合材料
光电子学
化学工程
极化(电化学)
纳米技术
凝聚态物理
铁磁性
化学
物理
物理化学
工程类
作者
Mengyuan Li,Harry J. Wondergem,M. Spijkman,Kamal Asadi,Ilias Katsouras,Paul W. M. Blom,Dago M. de Leeuw
出处
期刊:Nature Materials
[Nature Portfolio]
日期:2013-03-15
卷期号:12 (5): 433-438
被引量:430
摘要
Ferroelectric poly(vinylidene-fluoride) (PVDF) has, in the past, been proposed as an ideal candidate for data storage applications as it exhibits a bistable, remanent, polarization that can repeatedly be switched by an electric field. However, fabrication of smooth ferroelectric PVDF thin films, as required for microelectronic applications, is a long-standing problem. At present, the copolymer of PVDF with trifluoroethylene P(VDF–TrFE) is used, but the stack integrity and the limited thermal stability of its remanent polarization hamper large-scale integration. Here we show that smooth neat PVDF films can be made at elevated substrate temperature. On applying a short electrical pulse the ferroelectric polar δ-phase is formed, an overlooked polymorph of PVDF proposed 30 years ago, but never experimentally verified. The remanent polarization and coercive field are comparable to those of the copolymer. The enhanced thermal stability of the polarization is directly related to the high Curie temperature, whereas the ferroelectric properties are related to the molecular packing as derived from the refined crystal structure. The replacement of P(VDF–TrFE) by the commodity polymer PVDF may boost large-scale industrial applications. Although poly(vinylidene fluoride) is a well-known organic ferroelectric, its utilization in microelectronics has been hampered by the difficulty in obtaining uniform thin films. By exploiting a high-temperature deposition approach, smooth and thin films of the ferroelectric δ-phase polymorph of this material are now obtained, showing their potential for capacitors and non-volatile memories.
科研通智能强力驱动
Strongly Powered by AbleSci AI