石墨烯
分子束外延
材料科学
X射线光电子能谱
低能电子衍射
低能电子显微镜
双层石墨烯
石墨烯纳米带
同步加速器
电子衍射
光电子学
衍射
纳米技术
图层(电子)
电子显微镜
外延
光学
核磁共振
物理
作者
E. Moreau,S. Godey,Francisco J. Ferrer,D. Vignaud,X. Wallart,J. Ávila,M. C. Asensio,F. Bournel,Jean‐Jacques Gallet
摘要
Graphene layers have been grown by molecular beam epitaxy (MBE) on the (0001¯) C-face of SiC and have been characterized by atomic force microscopy, low energy electron diffraction (LEED), and UV photoelectron spectroscopy. Contrary to the graphitization process, the step-terrace structure of SiC is fully preserved during the MBE growth. LEED patterns show multiple orientation domains which are characteristic of graphene on SiC (0001¯), indicating non-Bernal rotated graphene planes. Well-defined Dirac cones, typical of single-layer graphene, have been observed in the valence band for few graphene layers by synchrotron spectroscopy, confirming the electronic decoupling of graphene layers.
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