Atomic Layered 2d/3d Heterostructure for Sensitive Photodetection

In recent years, there have been increasing interests in 2D materials, as a result of its outstanding basic properties and enormous potentiality of applications in photoelectric devices. In this work, a vertical 2D-GaSe/3D-GaSb heterostructure was fabricated by epitaxial growth and the device exhibits good photosensitivity and fast response speed of microsecond, which reveals a promising candidate for intergenerational development of photodetector.